NewAsGarelated center in GaAs

Photoelectric Junctions Between GaAs and Photosynthetic Reaction Center Protein

The electronic coupling between the photoactive proteins and semiconductors can be used for fabrication of a hybrid biosolid-state electrooptical devices. The robust cyanbacterial nanosized protein-chlorophyll complex photosystem I (PS I) can generate a photovoltage of 1 V with a quantum efficiency of ∼1 and can be used as a phototransistor gate. A functional dry-oriented junction was fabricate...

Picosecond electron transfer from photosynthetic reaction center protein to GaAs.

An extremely fast electron transfer through an electronically coupled junction between covalently bound oriented photosynthetic reaction center protein photosystem I (PS I) and n-GaAs was measured by time-resolved photoluminescence. It was found that the n-GaAs band edge luminescence intensity increased by a factor of 2, and the fast exponential decay constant was increased by a factor of 2.6 f...

Defect Nature of the 0.4-Ev Center in O-Doped GaAs

RF Characteristics of GaAs / InGaAsN / GaAs P

We have demonstrated a P-n-P Ga&JInGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (Vo~) that is 0.27 V lower than in a comparable P-n-p AIGaAs/GaAs HBT. The device shows nearide.al DC characteristics with a curfent gain (~) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AIGaAs/GaAs HBT, with ~~ and ~M...

Spin transport through GaAs/GaMnAs/GaAs

This work addresses spin-dependent transport in the heterostructure p-GaAs/GaMnAs/p-GaAs. The diluted ferromagnetic semiconductor GaMnAs layer behaves, within mean field approximation, as a potential well for spin-down carriers and a potential barrier for spin-up ones. Thus the transport would be spin-dependent. The goal of this work is to devise spin filters relevant for spin-dependent optoele...